Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

We report on ambipolar gate-defined quantum dots in silicon insulator nanowires fabricated using a customized complementary metal–oxide–semiconductor process. The ambipolarity was achieved by extending gate over an intrinsic channel to both highly doped n-type and p-type terminals. utilize the ability supply carrier reservoirs demonstrate reconfigurably define, with same electrodes, double either holes or electrons. use gate-based reflectometry sense inter-dot charge transition (IDT) of electron hole dots, achieving minimum integration time 160 (100) ?s for electrons (holes). Our results present opportunity combine, single device, long coherence times spins electrically controllable silicon.